Current Search: Metal oxide semiconductor field-effect transistors (x)
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Title
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Submicron CAD design and analysis of MOS Current Mirrors.
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Creator
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Rivas-Torres, Wilfredo, Florida Atlantic University, Roth, Zvi S., College of Engineering and Computer Science, Department of Computer and Electrical Engineering and Computer Science
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Abstract/Description
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Current Mirrors are widely used circuits in IC designs. They are used as current sources and loads. The proper selection of a Current Mirror configuration is therefore important. This thesis reviews critical parameters for Current Minors characterization. Six MOS Current Mirror configurations are studied, and their performance characteristics are compared. The proper selection and use of MOSFET models are presented. It is shown that CAD-based design and analysis is indispensable if realistic...
Show moreCurrent Mirrors are widely used circuits in IC designs. They are used as current sources and loads. The proper selection of a Current Mirror configuration is therefore important. This thesis reviews critical parameters for Current Minors characterization. Six MOS Current Mirror configurations are studied, and their performance characteristics are compared. The proper selection and use of MOSFET models are presented. It is shown that CAD-based design and analysis is indispensable if realistic MOS models such as BSIM3 are used. The CAD based analysis and design employs simulation parameter tuning, optimization and swept parameters. The presented CAD techniques allow a designer to make important tradeoffs for different configurations. One of the main thesis observations is that it is not always necessary to use more involved Current Mirror configurations; a Simple Current Mirror Configuration is often sufficient. The thesis also studies the adverse effects on the design caused by process variations.
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Date Issued
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2004
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PURL
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http://purl.flvc.org/fcla/dt/13119
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Subject Headings
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Metal oxide semiconductors--Computer-aided design, Integrated circuits, Metal oxide semiconductor field-effect transistors
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Format
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Document (PDF)
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Title
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Design ofMOSFET ultra-wideband low noise amplifiers.
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Creator
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Camacho, Esteban, Bagby, Jonathan S., Florida Atlantic University
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Abstract/Description
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Ultra-Wide band (UWB) systems are a new wireless technology capable of transmitting data over a wide spectrum of frequency bands with very low power and high data rates. This technology has the potential to replace almost every cable at home or in an office with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise amplifier (LNA) is one of the most important components. This thesis discusses the entire process involving the design ofUWB low noise amplifiers including a...
Show moreUltra-Wide band (UWB) systems are a new wireless technology capable of transmitting data over a wide spectrum of frequency bands with very low power and high data rates. This technology has the potential to replace almost every cable at home or in an office with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise amplifier (LNA) is one of the most important components. This thesis discusses the entire process involving the design ofUWB low noise amplifiers including a detailed stage by stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation tools and concepts from Level I equations are used in order to design a circuit with a realistic MOS model such as the BSIM3 used in this work. The LNA shows improved power consumption over the designs it is based on while still producing comparable results.
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Date Issued
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2008
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PURL
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http://purl.flvc.org/fau/fd/FA00012510
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Subject Headings
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Electronic circuit design, Integrated circuits--Very large scale integration, Metal-oxide semiconductor field-effect transistors--Design, Power transistors--Design
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Format
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Document (PDF)
