Current Search: Junction transistors (x)
-
-
Title
-
Thermal and stress analysis of heterojunction bipolar transistor.
-
Creator
-
Rivero, Jose Fernando., Florida Atlantic University, Tsai, Chi-Tay, College of Engineering and Computer Science, Department of Ocean and Mechanical Engineering
-
Abstract/Description
-
The objective of this work is to perform the current induce thermal stress analysis of heterojunction bipolar transistor and to determine the implications of the variation of the thermal shunt thickness. A thesis presented on multi-physics using finite element analysis, covering fluid, thermal and stress with fatigue life analysis of a microelectronic heterojunction bipolar transistor.
-
Date Issued
-
2001
-
PURL
-
http://purl.flvc.org/fcla/dt/12834
-
Subject Headings
-
Junction transistors, Thermal analysis
-
Format
-
Document (PDF)
-
-
Title
-
Thermal analysis of a heterojunction bipolar transistor.
-
Creator
-
Kokkalera, Subbaiya U., Florida Atlantic University, Tsai, Chi-Tay, College of Engineering and Computer Science, Department of Ocean and Mechanical Engineering
-
Abstract/Description
-
The Heterojunction Bipolar Transistor (HBT) is capable of delivering high current density at microwave frequencies and are now being implemented in microwave circuitry as high power amplifiers. The heat generated during device operation is dissipated through the Gallium Arsenide substrate. Because of its poor thermal conductivity the junction temperature rise can be large enough to degrade and thermally limit the performance of the device. The power HBT with multiple emitter fingers are...
Show moreThe Heterojunction Bipolar Transistor (HBT) is capable of delivering high current density at microwave frequencies and are now being implemented in microwave circuitry as high power amplifiers. The heat generated during device operation is dissipated through the Gallium Arsenide substrate. Because of its poor thermal conductivity the junction temperature rise can be large enough to degrade and thermally limit the performance of the device. The power HBT with multiple emitter fingers are susceptible to the thermal effect due to non-uniform temperature distribution. This results in a thermal effect called thermal runaway causing thermal-induced current instability and hot spot formation thus destroying the device. Thermal shunt technique which has been developed to suppress this non-uniform temperature involves fabrication of a thick metal thermal shunt connecting all the fingers thus forming a strong thermal coupling between the emitter fingers. In this thesis 2 and 3-dimensional thermal simulations were carried out using Finite Element techniques to study the thermal behavior of the HBT's as a function of thermal shunt and other device design configurations such as the number of emitter fingers, thickness of thermal shunt, emitter spacing, Silicon as a substrate material, power variation etc. The results are projected as a design guideline for HBT device.
Show less
-
Date Issued
-
1994
-
PURL
-
http://purl.flvc.org/fcla/dt/15081
-
Subject Headings
-
Junction transistors, Thermal analysis, Microwave circuits
-
Format
-
Document (PDF)