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Submicron CAD design and analysis of MOS Current Mirrors
- Date Issued:
- 2004
- Summary:
- Current Mirrors are widely used circuits in IC designs. They are used as current sources and loads. The proper selection of a Current Mirror configuration is therefore important. This thesis reviews critical parameters for Current Minors characterization. Six MOS Current Mirror configurations are studied, and their performance characteristics are compared. The proper selection and use of MOSFET models are presented. It is shown that CAD-based design and analysis is indispensable if realistic MOS models such as BSIM3 are used. The CAD based analysis and design employs simulation parameter tuning, optimization and swept parameters. The presented CAD techniques allow a designer to make important tradeoffs for different configurations. One of the main thesis observations is that it is not always necessary to use more involved Current Mirror configurations; a Simple Current Mirror Configuration is often sufficient. The thesis also studies the adverse effects on the design caused by process variations.
Title: | Submicron CAD design and analysis of MOS Current Mirrors. |
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Name(s): |
Rivas-Torres, Wilfredo Florida Atlantic University, Degree grantor Roth, Zvi S., Thesis advisor College of Engineering and Computer Science Department of Computer and Electrical Engineering and Computer Science |
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Type of Resource: | text | |
Genre: | Electronic Thesis Or Dissertation | |
Issuance: | monographic | |
Date Issued: | 2004 | |
Publisher: | Florida Atlantic University | |
Place of Publication: | Boca Raton, Fla. | |
Physical Form: | application/pdf | |
Extent: | 203 p. | |
Language(s): | English | |
Summary: | Current Mirrors are widely used circuits in IC designs. They are used as current sources and loads. The proper selection of a Current Mirror configuration is therefore important. This thesis reviews critical parameters for Current Minors characterization. Six MOS Current Mirror configurations are studied, and their performance characteristics are compared. The proper selection and use of MOSFET models are presented. It is shown that CAD-based design and analysis is indispensable if realistic MOS models such as BSIM3 are used. The CAD based analysis and design employs simulation parameter tuning, optimization and swept parameters. The presented CAD techniques allow a designer to make important tradeoffs for different configurations. One of the main thesis observations is that it is not always necessary to use more involved Current Mirror configurations; a Simple Current Mirror Configuration is often sufficient. The thesis also studies the adverse effects on the design caused by process variations. | |
Identifier: | 9780496233687 (isbn), 13119 (digitool), FADT13119 (IID), fau:9982 (fedora) | |
Collection: | FAU Electronic Theses and Dissertations Collection | |
Note(s): |
College of Engineering and Computer Science Thesis (M.S.)--Florida Atlantic University, 2004. |
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Subject(s): |
Metal oxide semiconductors--Computer-aided design Integrated circuits Metal oxide semiconductor field-effect transistors |
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Held by: | Florida Atlantic University Libraries | |
Persistent Link to This Record: | http://purl.flvc.org/fcla/dt/13119 | |
Sublocation: | Digital Library | |
Use and Reproduction: | Copyright © is held by the author, with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder. | |
Use and Reproduction: | http://rightsstatements.org/vocab/InC/1.0/ | |
Host Institution: | FAU | |
Is Part of Series: | Florida Atlantic University Digital Library Collections. |