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Finite element modeling of dislocation multiplication in microelectronic and optoelectronic devices/circuits

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Date Issued:
2005
Summary:
Two-dimensional and three-dimensional methodologies are developed to determine the dislocation multiplication in microelectronic and optoelectronic devices/circuits. A two-dimensional finite element code is developed to simulate the dislocation multiplication in microelectronic and optoelectronic devices/circuits. Example two-dimensional analyses are performed and analysis results are presented. The three-dimensional methodology is successfully implemented using ANSYS APDL Language within the ANSYS program. A three dimensional heterojunction bipolar transistor model is generated. CFD-thermal and structural analyses are performed to determine temperature fields and dislocation densities, which are calculated as functions of time, thickness of the thermal shunt, and heat generation rates.
Title: Finite element modeling of dislocation multiplication in microelectronic and optoelectronic devices/circuits.
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Name(s): Wang, Xueming.
Florida Atlantic University, Degree grantor
Tsai, Chi-Tay, Thesis advisor
College of Engineering and Computer Science
Department of Ocean and Mechanical Engineering
Type of Resource: text
Genre: Electronic Thesis Or Dissertation
Issuance: monographic
Date Issued: 2005
Publisher: Florida Atlantic University
Place of Publication: Boca Raton, Fla.
Physical Form: application/pdf
Extent: 142 p.
Language(s): English
Summary: Two-dimensional and three-dimensional methodologies are developed to determine the dislocation multiplication in microelectronic and optoelectronic devices/circuits. A two-dimensional finite element code is developed to simulate the dislocation multiplication in microelectronic and optoelectronic devices/circuits. Example two-dimensional analyses are performed and analysis results are presented. The three-dimensional methodology is successfully implemented using ANSYS APDL Language within the ANSYS program. A three dimensional heterojunction bipolar transistor model is generated. CFD-thermal and structural analyses are performed to determine temperature fields and dislocation densities, which are calculated as functions of time, thickness of the thermal shunt, and heat generation rates.
Identifier: 9780542391590 (isbn), 12182 (digitool), FADT12182 (IID), fau:9089 (fedora)
Collection: FAU Electronic Theses and Dissertations Collection
Note(s): College of Engineering and Computer Science
Thesis (Ph.D.)--Florida Atlantic University, 2005.
Subject(s): Finite element method
Computational grids
ANSYS (Computer systems)
Semiconductors--Materials--Analysis
Held by: Florida Atlantic University Libraries
Persistent Link to This Record: http://purl.flvc.org/fcla/dt/12182
Sublocation: Digital Library
Use and Reproduction: Copyright © is held by the author, with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder.
Use and Reproduction: http://rightsstatements.org/vocab/InC/1.0/
Host Institution: FAU
Is Part of Series: Florida Atlantic University Digital Library Collections.