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Design ofMOSFET ultra-wideband low noise amplifiers

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Date Issued:
2008
Summary:
Ultra-Wide band (UWB) systems are a new wireless technology capable of transmitting data over a wide spectrum of frequency bands with very low power and high data rates. This technology has the potential to replace almost every cable at home or in an office with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise amplifier (LNA) is one of the most important components. This thesis discusses the entire process involving the design ofUWB low noise amplifiers including a detailed stage by stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation tools and concepts from Level I equations are used in order to design a circuit with a realistic MOS model such as the BSIM3 used in this work. The LNA shows improved power consumption over the designs it is based on while still producing comparable results.
Title: Design ofMOSFET ultra-wideband low noise amplifiers.
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Name(s): Camacho, Esteban
Bagby, Jonathan S., Thesis advisor
Florida Atlantic University, Degree grantor
Type of Resource: text
Genre: Electronic Thesis Or Dissertation
Date Created: 2008
Date Issued: 2008
Publisher: Florida Atlantic University
Place of Publication: Boca Raton, Fla.
Physical Form: application/pdf
Extent: 138 p.
Language(s): English
Summary: Ultra-Wide band (UWB) systems are a new wireless technology capable of transmitting data over a wide spectrum of frequency bands with very low power and high data rates. This technology has the potential to replace almost every cable at home or in an office with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise amplifier (LNA) is one of the most important components. This thesis discusses the entire process involving the design ofUWB low noise amplifiers including a detailed stage by stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation tools and concepts from Level I equations are used in order to design a circuit with a realistic MOS model such as the BSIM3 used in this work. The LNA shows improved power consumption over the designs it is based on while still producing comparable results.
Identifier: FA00012510 (IID)
Degree granted: Thesis (M.S.)--Florida Atlantic University, 2008.
Collection: FAU Electronic Theses and Dissertations Collection
Note(s): College of Engineering and Computer Science
Subject(s): Electronic circuit design
Integrated circuits--Very large scale integration
Metal-oxide semiconductor field-effect transistors--Design
Power transistors--Design
Held by: Florida Atlantic University Libraries
Sublocation: Digital Library
Persistent Link to This Record: http://purl.flvc.org/fau/fd/FA00012510
Use and Reproduction: Copyright © is held by the author with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder.
Use and Reproduction: http://rightsstatements.org/vocab/InC/1.0/
Host Institution: FAU
Is Part of Series: Florida Atlantic University Digital Library Collections.