You are here
Solar cell degradation under ionizing radiation ambient
- Date Issued:
- 2010
- Summary:
- The efforts addressed in this thesis refer to assaying the degradations in modern solar cells used in space-borne and/or nuclear environment applications. This study is motivated to address the following: 1. Modeling degradations in Si pn-junction solar cells (devices-under-test or DUTs) under different ionizing radiation dosages 2. Preemptive and predictive testing to determine the aforesaid degradations that decide eventual reliability of the DUTs; and 3. Using electrical overstressing (EOS) to emulate the fluence of ionizing radiation dosage on the DUT. Relevant analytical methods, computational efforts and experimental studies are described. Forward/reverse characteristics as well as ac impedance performance of a set of DUTs under pre- and post- electrical overstressings are evaluated. Change in observed DUT characteristics are correlated to equivalent ionizing-radiation dosages. The results are compiled and cause-effect considerations are discussed. Conclusions are enumerated and inferences are made with direction for future studies.
Title: | Solar cell degradation under ionizing radiation ambient: preemptive testing and evaluation via electrical overstressing. |
![]() ![]() |
---|---|---|
Name(s): |
Thengum Pallil, George A. College of Engineering and Computer Science Department of Computer and Electrical Engineering and Computer Science |
|
Type of Resource: | text | |
Genre: | Electronic Thesis Or Dissertation | |
Date Issued: | 2010 | |
Publisher: | Florida Atlantic University | |
Physical Form: | electronic | |
Extent: | x, 80 p. : ill. (some col.) | |
Language(s): | English | |
Summary: | The efforts addressed in this thesis refer to assaying the degradations in modern solar cells used in space-borne and/or nuclear environment applications. This study is motivated to address the following: 1. Modeling degradations in Si pn-junction solar cells (devices-under-test or DUTs) under different ionizing radiation dosages 2. Preemptive and predictive testing to determine the aforesaid degradations that decide eventual reliability of the DUTs; and 3. Using electrical overstressing (EOS) to emulate the fluence of ionizing radiation dosage on the DUT. Relevant analytical methods, computational efforts and experimental studies are described. Forward/reverse characteristics as well as ac impedance performance of a set of DUTs under pre- and post- electrical overstressings are evaluated. Change in observed DUT characteristics are correlated to equivalent ionizing-radiation dosages. The results are compiled and cause-effect considerations are discussed. Conclusions are enumerated and inferences are made with direction for future studies. | |
Identifier: | 705370796 (oclc), 2979384 (digitool), FADT2979384 (IID), fau:3606 (fedora) | |
Note(s): |
by George A. Thengum Pallil. Thesis (M.S.C.S.)--Florida Atlantic University, 2010. Includes bibliography. Electronic reproduction. Boca Raton, Fla., 2010. Mode of access: World Wide Web. |
|
Subject(s): |
Renewable energy sources Solar cells -- Effect of radiation on Reliability (Engineering) Electric discharges Ionizing radiation |
|
Persistent Link to This Record: | http://purl.flvc.org/FAU/2979384 | |
Use and Reproduction: | http://rightsstatements.org/vocab/InC/1.0/ | |
Host Institution: | FAU |