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Thermal analysis of a heterojunction bipolar transistor
| Title: | Thermal analysis of a heterojunction bipolar transistor. |
 171 views 91 downloads |
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| Name(s): |
Kokkalera, Subbaiya U. Florida Atlantic University, Degree grantor Tsai, Chi-Tay, Thesis advisor College of Engineering and Computer Science Department of Ocean and Mechanical Engineering |
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| Type of Resource: | text | |
| Genre: | Electronic Thesis Or Dissertation | |
| Issuance: | monographic | |
| Date Issued: | 1994 | |
| Publisher: | Florida Atlantic University | |
| Place of Publication: | Boca Raton, Fla. | |
| Physical Form: | application/pdf | |
| Extent: | 125 p. | |
| Language(s): | English | |
| Summary: | The Heterojunction Bipolar Transistor (HBT) is capable of delivering high current density at microwave frequencies and are now being implemented in microwave circuitry as high power amplifiers. The heat generated during device operation is dissipated through the Gallium Arsenide substrate. Because of its poor thermal conductivity the junction temperature rise can be large enough to degrade and thermally limit the performance of the device. The power HBT with multiple emitter fingers are susceptible to the thermal effect due to non-uniform temperature distribution. This results in a thermal effect called thermal runaway causing thermal-induced current instability and hot spot formation thus destroying the device. Thermal shunt technique which has been developed to suppress this non-uniform temperature involves fabrication of a thick metal thermal shunt connecting all the fingers thus forming a strong thermal coupling between the emitter fingers. In this thesis 2 and 3-dimensional thermal simulations were carried out using Finite Element techniques to study the thermal behavior of the HBT's as a function of thermal shunt and other device design configurations such as the number of emitter fingers, thickness of thermal shunt, emitter spacing, Silicon as a substrate material, power variation etc. The results are projected as a design guideline for HBT device. | |
| Identifier: | 15081 (digitool), FADT15081 (IID), fau:11859 (fedora) | |
| Collection: | FAU Electronic Theses and Dissertations Collection | |
| Note(s): |
College of Engineering and Computer Science Thesis (M.S.E.)--Florida Atlantic University, 1994. |
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| Subject(s): |
Junction transistors Thermal analysis Microwave circuits |
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| Held by: | Florida Atlantic University Libraries | |
| Persistent Link to This Record: | http://purl.flvc.org/fcla/dt/15081 | |
| Sublocation: | Digital Library | |
| Use and Reproduction: | Copyright © is held by the author, with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder. | |
| Use and Reproduction: | http://rightsstatements.org/vocab/InC/1.0/ | |
| Host Institution: | FAU | |
| Is Part of Series: | Florida Atlantic University Digital Library Collections. |
