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prediction of dislocation generation during gallium arsenide crystal growth

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Date Issued:
1991
Summary:
Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal.
Title: The prediction of dislocation generation during gallium arsenide crystal growth.
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Name(s): Liu, Ping.
Florida Atlantic University, Degree grantor
Tsai, Chi-Tay, Thesis advisor
College of Engineering and Computer Science
Department of Ocean and Mechanical Engineering
Type of Resource: text
Genre: Electronic Thesis Or Dissertation
Issuance: monographic
Date Issued: 1991
Publisher: Florida Atlantic University
Place of Publication: Boca Raton, Fla.
Physical Form: application/pdf
Extent: 71 p.
Language(s): English
Summary: Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal.
Identifier: 14780 (digitool), FADT14780 (IID), fau:11570 (fedora)
Collection: FAU Electronic Theses and Dissertations Collection
Note(s): College of Engineering and Computer Science
Thesis (M.S.)--Florida Atlantic University, 1991.
Subject(s): Gallium arsenide semiconductors
Dislocations in crystals
Crystal growth
Held by: Florida Atlantic University Libraries
Persistent Link to This Record: http://purl.flvc.org/fcla/dt/14780
Sublocation: Digital Library
Use and Reproduction: Copyright © is held by the author, with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder.
Use and Reproduction: http://rightsstatements.org/vocab/InC/1.0/
Host Institution: FAU
Is Part of Series: Florida Atlantic University Digital Library Collections.