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prediction of dislocation generation during gallium arsenide crystal growth
- Date Issued:
- 1991
- Summary:
- Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal.
Title: | The prediction of dislocation generation during gallium arsenide crystal growth. |
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Name(s): |
Liu, Ping. Florida Atlantic University, Degree grantor Tsai, Chi-Tay, Thesis advisor College of Engineering and Computer Science Department of Ocean and Mechanical Engineering |
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Type of Resource: | text | |
Genre: | Electronic Thesis Or Dissertation | |
Issuance: | monographic | |
Date Issued: | 1991 | |
Publisher: | Florida Atlantic University | |
Place of Publication: | Boca Raton, Fla. | |
Physical Form: | application/pdf | |
Extent: | 71 p. | |
Language(s): | English | |
Summary: | Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal. | |
Identifier: | 14780 (digitool), FADT14780 (IID), fau:11570 (fedora) | |
Collection: | FAU Electronic Theses and Dissertations Collection | |
Note(s): |
College of Engineering and Computer Science Thesis (M.S.)--Florida Atlantic University, 1991. |
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Subject(s): |
Gallium arsenide semiconductors Dislocations in crystals Crystal growth |
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Held by: | Florida Atlantic University Libraries | |
Persistent Link to This Record: | http://purl.flvc.org/fcla/dt/14780 | |
Sublocation: | Digital Library | |
Use and Reproduction: | Copyright © is held by the author, with permission granted to Florida Atlantic University to digitize, archive and distribute this item for non-profit research and educational purposes. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder. | |
Use and Reproduction: | http://rightsstatements.org/vocab/InC/1.0/ | |
Host Institution: | FAU | |
Is Part of Series: | Florida Atlantic University Digital Library Collections. |