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SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVE RESPONSE IN INDIUM-DOPED SILICON

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Date Issued:
1971
Summary:
The spectral dependence of extrinsic photoconductivity over the range 130 meV to 700 meV has been measured (mostly at 80°K, with light chopped at 270 Hz) for a variety of indium doped silicon crystals. Samples were characterized by 70°- 400°K Hall and conductivity measurements, and had indium densities ranging from 7 x 10^15 cm^-3 to 6 x 10^17 cm^-3. Crystals of moderately large and very small compensation were used. Data was converted into response per incident photon and per absorbed photon, using photoionization cross-section data measured on the same group of crystals. The response per absorbed photon is approximately constant over the studied spectral range for most crystals, with no visible evidence of an oscillatory component. The data was Fourier analyzed in order to emphasize any latent periodicity in the photo-response. A weak periodic component at 10 meV intervals was found and tentatively associated with localized phonon modes.
Title: THE SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVE RESPONSE IN INDIUM-DOPED SILICON.
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Name(s): MASON, HOWARD JOSEPH, JR.
Florida Atlantic University, Degree Grantor
Type of Resource: text
Genre: Electronic Thesis Or Dissertation
Issuance: monographic
Date Issued: 1971
Publisher: Florida Atlantic University
Place of Publication: Boca Raton, Fla.
Physical Form: application/pdf
Extent: 97 p.
Language(s): English
Summary: The spectral dependence of extrinsic photoconductivity over the range 130 meV to 700 meV has been measured (mostly at 80°K, with light chopped at 270 Hz) for a variety of indium doped silicon crystals. Samples were characterized by 70°- 400°K Hall and conductivity measurements, and had indium densities ranging from 7 x 10^15 cm^-3 to 6 x 10^17 cm^-3. Crystals of moderately large and very small compensation were used. Data was converted into response per incident photon and per absorbed photon, using photoionization cross-section data measured on the same group of crystals. The response per absorbed photon is approximately constant over the studied spectral range for most crystals, with no visible evidence of an oscillatory component. The data was Fourier analyzed in order to emphasize any latent periodicity in the photo-response. A weak periodic component at 10 meV intervals was found and tentatively associated with localized phonon modes.
Identifier: 13428 (digitool), FADT13428 (IID), fau:10278 (fedora)
Note(s): Thesis (M.S.)--Florida Atlantic University, 1971.
Subject(s): Silicon crystals
Indium
Photoconductivity
Semiconductor doping
Held by: Florida Atlantic University Libraries
Persistent Link to This Record: http://purl.flvc.org/fcla/dt/13428
Sublocation: Digital Library
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Use and Reproduction: http://rightsstatements.org/vocab/InC/1.0/
Host Institution: FAU
Is Part of Series: Florida Atlantic University Digital Library Collections.