Current Search: Semiconductors--Materials--Analysis (x)
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Title
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Finite element modeling of dislocation multiplication in microelectronic and optoelectronic devices/circuits.
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Creator
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Wang, Xueming., Florida Atlantic University, Tsai, Chi-Tay, College of Engineering and Computer Science, Department of Ocean and Mechanical Engineering
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Abstract/Description
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Two-dimensional and three-dimensional methodologies are developed to determine the dislocation multiplication in microelectronic and optoelectronic devices/circuits. A two-dimensional finite element code is developed to simulate the dislocation multiplication in microelectronic and optoelectronic devices/circuits. Example two-dimensional analyses are performed and analysis results are presented. The three-dimensional methodology is successfully implemented using ANSYS APDL Language within the...
Show moreTwo-dimensional and three-dimensional methodologies are developed to determine the dislocation multiplication in microelectronic and optoelectronic devices/circuits. A two-dimensional finite element code is developed to simulate the dislocation multiplication in microelectronic and optoelectronic devices/circuits. Example two-dimensional analyses are performed and analysis results are presented. The three-dimensional methodology is successfully implemented using ANSYS APDL Language within the ANSYS program. A three dimensional heterojunction bipolar transistor model is generated. CFD-thermal and structural analyses are performed to determine temperature fields and dislocation densities, which are calculated as functions of time, thickness of the thermal shunt, and heat generation rates.
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Date Issued
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2005
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PURL
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http://purl.flvc.org/fcla/dt/12182
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Subject Headings
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Finite element method, Computational grids, ANSYS (Computer systems), Semiconductors--Materials--Analysis
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Format
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Document (PDF)